| PART |
Description |
Maker |
| GCX1205-23 GCX1217-23 GCX1206-23 GCX1213-23 GCX120 |
10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
5.6 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
1.2 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
VARACTOR DIODES Surface Mount SOT23 Abrupt Junction TM
3.9 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
MICROSEMI CORP-LOWELL
Microsemi Corporation
|
| SMV1413-079 |
Abrupt Junction Tuning Varactors S BAND, 7.4 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
Skyworks Solutions, Inc.
|
| 1N5455 1N5446B 1N5465A 1N5470A 1N5475C 1N5443A 1N5 |
82 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
18 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
15 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
33 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
100 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
68 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
8.2 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
20 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
39 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
|
MICROSEMI CORP-LOWELL
|
| 1N4800A 1N4795B 1N4787A |
100 pF, 17 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
39 pF, 22 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
8.2 pF, 28 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
|
|
| AT12020-21 |
SILICON ABRUPT VARACTOR DIODE 38 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
Advanced Semiconductor, Inc.
|
| PC116C PC128 PG210C PG210B PC117 |
22 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
33 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
10 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
47 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
|
| V628 V620 |
15 pF, 20 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
6.8 pF, 20 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
|
MICROSEMI CORP-LOWELL
|
| GMV2114-GM1 GMV2154-GM1 GMV1981-GM1 GMV5007-GM1 GM |
Surface Mount Varactor Diodes
C BAND, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
C BAND, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
C BAND, 0.25 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE
|
Microsemi Corporation
MICROSEMI CORP-LOWELL
|
| MV1660BCHIP 1N5472A MV1630 MV1630CCHIP 1N5444CCHIP |
VHF-UHF BAND, 47 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
VHF-UHF BAND, 18 pF, 20 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
VHF-UHF BAND, 12 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
VHF-UHF BAND, 39 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
VHF-UHF BAND, 15 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
|
| MV1636BCHIP 1N5446BCHIP 1N5461BCHIP 1N5470C 1N5446 |
VHF-UHF BAND, 27 pF, 20 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
VHF-UHF BAND, 18 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
VHF-UHF BAND, 6.8 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
VHF-UHF BAND, 33 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
VHF-UHF BAND, 56 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
|
| 1N5446A 1N5468A 1N5475ACHIP |
VHF-UHF BAND, 18 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
VHF-UHF BAND, 22 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
VHF-UHF BAND, 82 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
|
| KV1913A KV1933A KV1973A KV2143 KV2153 GC1303 KV212 |
ENHANCED PERFORMANCE SURFACE MOUNT EPSM PACKAGED DEVICES
ENHANCED PERFORMANCE SURFACE MOUNT EPSM PACKAGED DEVICES C BAND, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
ENHANCED PERFORMANCE SURFACE MOUNT EPSM PACKAGED DEVICES C BAND, 1.8 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
OPTOCOUPLER 10MBPS OC 5-SOP
Tuning Varactors
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
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